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Preparing materials which simultaneously exhibit spontaneous magnetic and electrical polarisations is challenging as the electronic features which are typically used to stabilise each of these two polarisations in materials are contradictory. Here we show that by performing low-temperature cation-exchange reactions on a hybrid improper ferroelectric material, Li2SrTa2O7, which adopts a polar structure due to a cooperative tilting of its constituent TaO6 octahedra rather than an electronically driven atom displacement, a paramagnetic polar phase, MnSrTa2O7, can be prepared. On cooling below 43 K the Mn2+ centres in MnSrTa2O7 adopt a canted antiferromagnetic state, with a small spontaneous magnetic moment. On further cooling to 38 K there is a further transition in which the size of the ferromagnetic moment increases coincident with a decrease in magnitude of the polar distortion, consistent with a coupling between the two polarisations. 

Successful implementation of hot carrier solar cells requires preserving high carrier temperature as carriers migrate through the active layer. Here, we demonstrated that addition of alkali cations in hybrid organic-inorganic lead halide perovskites led to substantially elevated carrier temperature, reduced threshold for phonon bottleneck, and enhanced hot carrier transport. The synergetic effects from the Rb, Cs, and K cations result in ~900 K increase in the effective carrier temperature at a carrier density around 10 18 cm −3 with an excitation 1.45 eV above the bandgap. In the doped thin films, the protected hot carriers migrate 100 s of nanometers longer than the undoped sample as imaged by ultrafast microscopy. We attributed these improvements to the relaxation of lattice strain and passivation of halide vacancies by alkali cations based on x-ray structural characterizations and first principles calculations. 

In recent years, Cu₂ZnSn(S,Se)₄(CZTSSe) materials have enabled important progress in associated thin‐film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu₂BaSnS₄(CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two‐step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high‐quality nominally pinhole‐free films with large (>1 µm) grains of selenium‐incorporated (x= 3) Cu₂BaSnS_4−xSe_x(CBTSSe) for high‐efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single‐junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air‐annealing step, a CBTSSe‐based PV device with 5.2% PCE (total area 0.425 cm²) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se‐rich Cu₂BaSnS_4–xSe_xfamily for high‐efficiency and earth‐abundant PV.